Emergent novel metallic state in a disordered 2D Mott insulator |
| TYPE | Condensed Matter Seminar |
| Speaker: | Elias Lahoud |
| Affiliation: | Technion |
| Date: | 20.08.2013 |
| Time: | 14:30 |
| Location: | Lidow Nathan Rosen (300) |
| Abstract: | It is well established that for non-interacting electrons, increasing dis- order drives a metal into a gapless localized Anderson insulator. While in three dimensions a threshold in disorder must be crossed for the transition, in two dimensions and lower, the smallest amount of disor- der destabilizes the metal. The nature of the metal-insulator transition in an interacting system remains unresolved. In this work we explore the effect of disorder on a strongly correlated Mott insulator without changing the carrier concentration. Angle resolved photoemission spectroscopy (ARPES) measurements on copper intercalated single crystals of the layered dichalcogenide 1T-TaS2 reveal the presence of new delocalized states within the Mott gap. This is the first experimen- tal realization of a novel disorder-induced metal that was theoretically predicted to exist between the Mott insulator and Anderson insulator. |